Abstract
In this work we report a principle that allows one to write visible light emitting silicon patterns of arbitrary shape down to the sub-micrometer scale. We demonstrate that porous Si growth can electrochemically be initiated preferentially at surface defects created in an n-type Si substrate by S exp i++ ion bombardment. Using a focused ion beam (FIB) as a source of ions, arbitrary defect patterns can be written into a substrate. The growth of light emitting porous silicon is then selectively achieved by an electrochemical treatment which triggers Si dissolution only at these defect sites. The selectivity of the electrochemical dissolution reaction can be attributed to a facilitated Schottky barrier breakdown at the implanted surface defects which leads to the desired pore formation in confined surface areas.