Abstract
Isochronal annealing of Al-1100 and cast Al-Si alloys (Si-content 2, 4, 6 and 8 wt%) after deformation of 66% thickness reduction was investigated between room temperature (RT) and 500 degrees C. The annealing of defects was studied using Doppler Broadening Spectroscopy (DBS), Total Strain (epsilon(T)) and Scanning Electron Microscope (SEM). It was found that; (i) three annealing stages of microstructure have been identified for Al-1100 and Al-Si alloys which are related to recovery, partial recrystallization and complete recrystallization (ii) the interaction between Si-precipitates and dislocations in Al-Si alloys leads to higher values of normalized line shape parameter (S-nor) and lower values of epsilon(T) than those for Al-1100 alloy also, it retarded the recovery and recrystallization with temperature (iii) the S-W plot revealed the presence of one type of defects in Al-1100 alloy but in Al-Si alloys the slope of the trajectory changes, which may indicate the occurrence of another defect type (Si-dislocation interaction) (iv) a negative correlation is observed between epsilon(T) and S-nor while a positive correlation between epsilon(T) and normalized wing parameter (W-nor) is obvious. (c) 2013 Elsevier Ltd. All rights reserved.