Abstract
•Positron behavior in indirect band-gap semiconductors under pressure.•Elastic constants versus pressure in AlSb.•Electron and positron energy levels in AlSb at various pressures.•Hydrostatic pressure effect on positron affinity in AlSb.•Positron diffusion constant in AlSb under compression.•The information gathered from the present investigation is very useful in slow-positron-beam experiments and positron annihilation in indirect band-gap semiconductors.
The positron characteristics such as chemical potential, affinity, effective mass and diffusion constant in AlSb indirect band-gap semiconductor are investigated at zero pressure and under compression. The calculations are mainly performed in the framework of a pseudopotential approach. We follow the evolution of all features of interest as a function of pressure. Our results show that upon compression, the positron becomes thermalized in a time longer than that at zero pressure. Moreover, its affinity decreases with raising pressure indicating that it annihilates differently from zero pressure. A close inspection of the positron diffusion constant suggests that the positron diffuses better under applied pressure. The present contribution can be a useful support for studying positron annihilation in indirect band gap semiconducting materials.