Post-CMOS FinFET Integration of Bismuth Telluride and Antimony Telluride Thin-Film-Based Thermoelectric Devices on SoI Substrate

Ethem Erkan Aktakka; Niloufar Ghafouri; Casey E. Smith; Rebecca L. Peterson; Muhammad Mustafa Hussain; Khalil Najafi

doi:10.1109/LED.2013.2277693

Back

Post-CMOS FinFET Integration of Bismuth Telluride and Antimony Telluride Thin-Film-Based Thermoelectric Devices on SoI Substrate

Journal article

Peer reviewed

Post-CMOS FinFET Integration of Bismuth Telluride and Antimony Telluride Thin-Film-Based Thermoelectric Devices on SoI Substrate

Ethem Erkan Aktakka, Niloufar Ghafouri, Casey E. Smith, Rebecca L. Peterson, Muhammad Mustafa Hussain and Khalil Najafi

IEEE electron device letters, Vol.34(10), pp.1334-1336

01/10/2013

DOI: https://doi.org/10.1109/LED.2013.2277693

Abstract

Antimony telluride ({\rm Sb}_{2}{\rm Te}_{3})

bismuth telluride ({\rm Bi}_{2}{\rm Te}_{3})

CMOS

CMOS integrated circuits

FinFET

FinFETs

heterogeneous integration

Metals

Substrates

Tellurium

Temperature measurement

thermoelectricity

This letter reports, for the first time, heterogeneous integration of bismuth telluride (Bi 2 Te 3 ) and antimony telluride (Sb 2 Te 3 ) thin-film-based thermoelectric (TE) devices on a CMOS substrate. The TE films are deposited on a silicon-on-insulator substrate with FinFETs (3-D multiple gate field effect transistors) via a characterized TE-film coevaporation and shadow-mask patterning process using predeposition surface treatment methods for reduced TE-metal contact resistance. As a demonstration vehicle, a 2 × 2 mm 2 -sized integrated planar thermoelectric generator (TEG) is shown to harvest 0.7 μW from 21-K temperature gradient. Transistor performance showed no significant change upon post-CMOS TEG integration, indicating, for the first time, the CMOS compatibility of the Bi 2 Te 3 and Sb 2 Te 3 thin films, which could be leveraged for realization of high-performance integrated micro-TE harvesters and coolers.

Metrics

1 Record Views

See more details

Details

Title: Post-CMOS FinFET Integration of Bismuth Telluride and Antimony Telluride Thin-Film-Based Thermoelectric Devices on SoI Substrate
Creators - without role: Ethem Erkan Aktakka - University of Michigan–Ann Arbor
Niloufar Ghafouri - University of Michigan–Ann Arbor
Casey E. Smith - King Abdullah University of Science and Technology
Rebecca L. Peterson - University of Michigan–Ann Arbor
Muhammad Mustafa Hussain - King Abdullah University of Science and Technology
Khalil Najafi - University of Michigan–Ann Arbor
Publication Details: IEEE electron device letters, Vol.34(10), pp.1334-1336
Publisher: IEEE
Identifiers: 9943976408331
Academic Unit: King Saud University; King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article