Abstract
Molybdenum oxide (MoO3) films were prepared on Si (100) at room temperature using radiofrequency (RF) magnetron sputtering technique. The films were annealed in the presence of air at different temperatures from 100 to 550 °C. The as-prepared films were amorphous as revealed by the X-ray diffraction analysis. Post-deposition annealing of MoO3 film enhanced its crystalline structure, showing β-MoO3 phase at 100 °C and a mixture of α-MoO3 and β-MoO3 phases at 300 °C. The crystallinity of α-MoO3 improved with increasing the annealing temperature to 500 °C, however, the β-MoO3 phase became amorphous. The film was dissolved at 550 °C as no diffraction peak of MoO3 was detected at this temperature. The band gap of MoO3 was evaluated through ultraviolet–visible spectroscopy. The results showed a decrease in the band gap from 3.70 to 3.39 eV with increasing the annealing temperature to 500 °C. The film with optimum crystalline quality was used to fabricate a metal-semiconductor-metal (MSM) photodetector device. The photo-detection characteristics of the film were studied after the deposition of Nickel contacts on MoO3 using a metal mask having interdigitated electrodes. The fabricated device exhibited a high current gain and sensitivity under 365 nm UV illumination. The responsivity of the device under UV light was 0.41 A/W at 7 V. The rise and decay time of UV photodetector were 0.32 and 0.23 s respectively. These findings suggested that the MoO3 film with dominant orthorhombic α-phase can potentially be used for the photodetector application.