Predefined initiation of porous GaAs using focused ion beam surface sensitization

Journal article

Peer reviewed

P Schmuki, L. E Erickson, D. J Lockwood, B. F Mason, J. W Fraser, G Champion and H. J Labbe

Journal of the Electrochemical Society, Vol.146(2), pp.735-740

01/02/1999

Abstract

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Condensed matter: structure, mechanical and thermal properties

Defects and impurities in crystals; microstructure

Disordered solids

Doping and impurity implantation in iii-v and ii-vi semiconductors

Exact sciences and technology

Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation

Photoluminescence

Physics

Porous materials

Powders, porous materials

Structure of solids and liquids; crystallography

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Title: Predefined initiation of porous GaAs using focused ion beam surface sensitization
Creators - without role: P Schmuki - Department of Materials Science, Swiss Federal Institute of Technology (EPFL), 1015 Lausanne, Switzerland
L. E Erickson - Institute for Microstructural Sciences
D. J Lockwood - Institute for Microstructural Sciences
B. F Mason - Institute for Microstructural Sciences
J. W Fraser - Institute for Microstructural Sciences
G Champion - Institute for Microstructural Sciences
H. J Labbe - Institute for Microstructural Sciences
Publication Details: Journal of the Electrochemical Society, Vol.146(2), pp.735-740
Publisher: Electrochemical Society
Identifiers: 9936766108331
Academic Unit: King Abdulaziz University
Language: English
Resource Type: Journal article