Abstract
Nowadays, all technological and industrial progress depends strongly on the advancement of the field of research in materials sciences (thin layers). This reflects recent developments in the development of thioindigo (TF) thin layers prepared by growth of the crystal layers.
Structural characterization designates that the TF sample (powder) has a monoclinic structure. FT-IR bands for the annealed thin film at 120 °C show, without change in the chemical structure, that the intensity of the bands was increased for the of TF samples. The calculated
absorption coefficient was used to approximate the type of transitions for TF sample before and after annealing. We present the results of characterization of the TF thin layers. We found a correlation between the electrical and structural properties of our samples.