Abstract
Investigation of the switching phenomenon on TlGaSSe single crystal revealed that it is typical for a memory switch. The switching process takes place with both polarities on the crystal and have symmetrical shapes. Current voltage characteristics (CVC) of symmetrical Ag/TIGaSSe/Ag structures exhibit two distinct regions, high resistance "OFF" state and low resistance "ON" state having negative differential resistance. In addition, TlGaSSe is a quarternary semiconductor exhibiting S-type I-V characteristics. The experimental results indicate that the phenomenon in our sample is very sensitive to temperature; light intensity and sample thickness. The switching parameters were checked under the influence of different factors of the ambient condition. The present investigation is the first one on switching phenomenon of TIGaSSe. DOI: 10.12693/APhysPolA.123.121