Abstract
YBa2Cu3O7-delta (YBCO) films with Zr doping have been prepared successfully by the trifluoroacetate metal-organic deposition (TFA-MOD) method through dissolving Zr acetylacetonate in the precursor solution. Yttria-stabilized zirconia (YSZ) nanoparticles were detected in the doped YBCO films by x-ray diffraction (XRD) and scanning electron microscopy (SEM). From the analysis of XRD omega and phi scans, the doped films have better out-of-plane and in-plane textures than those of the un-doped YBCO film. Although the doped YBCO films have a lower critical transition temperature (T-c) than that of un-doped YBCO film, a very significant enhancement of critical current density (J(c)) is displayed as compared to the un-doped film at high applied fields. A high J(c) near 10(6) A cm(-2) at 1 T and a J(c) of 10(5) A cm(-2) at 5 T were observed in 6% doped Zr film, which are 5 times and 25 times the J(c) values of the un-doped film in the same applied fields, respectively, indicating an optimal defect density created by 6% Zr doping.