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Preparation of polycrystalline boron carbide thin films at room temperature by pulsed ion-beam evaporation
Journal article   Peer reviewed

Preparation of polycrystalline boron carbide thin films at room temperature by pulsed ion-beam evaporation

H Suematsu, K Kitajima, T Suzuki, W Jiang, K Yatsui, K Kurashima and Y Bando
Applied physics letters, Vol.80(7), pp.1153-1155
18/02/2002
DOI: https://doi.org/10.1063/1.1449539

Abstract

Physical Sciences Physics Physics, Applied Science & Technology
Polycrystalline boron carbide (B4C) thin films have been prepared by a pulsed ion-beam evaporation technique without heating substrates or annealing samples. Here, we clearly demonstrate the possibility of preparing B4C thin films for electronic device applications. (C) 2002 American Institute of Physics.

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