Properties of a pn junction developed with a Si microprobe by vapour-liquid-solid growth using in situ doping

Journal article

Peer reviewed

M. S Islam, T Kawashima, K Sawada and M Ishida

Semiconductor science and technology, Vol.21(9), pp.1364-1368

01/09/2006

Abstract

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures

Electronic transport in interface structures

Exact sciences and technology

Physics

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Title: Properties of a pn junction developed with a Si microprobe by vapour-liquid-solid growth using in situ doping
Creators - without role: M. S Islam - Toyohashi University of Technology
T Kawashima - Toyohashi University of Technology
K Sawada - Toyohashi University of Technology
M Ishida - Toyohashi University of Technology
Publication Details: Semiconductor science and technology, Vol.21(9), pp.1364-1368
Publisher: Institute of Physics
Identifiers: 9937496408331
Academic Unit: King Abdulaziz University
Language: English
Resource Type: Journal article