Properties of n-type SnO 2 semiconductor prepared by spray ultrasonic technique for photovoltaic applications

Journal article

Peer reviewed

H. Bendjedidi, A. Attaf, H. Saidi, M. S. Aida, S. Semmari, A. Bouhdjar and Y. Benkhetta

Journal of semiconductors, Vol.36(12), p.123002

12/2015

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Title: Properties of n-type SnO 2 semiconductor prepared by spray ultrasonic technique for photovoltaic applications
Creators - without role: H. Bendjedidi - University of Biskra
A. Attaf - University of Biskra
H. Saidi - University of Biskra
M. S. Aida - Constantine 1 University
S. Semmari - University of Biskra
A. Bouhdjar - University of Biskra
Y. Benkhetta - University of Biskra
Publication Details: Journal of semiconductors, Vol.36(12), p.123002
Identifiers: 9937982108331
Academic Unit: King Abdulaziz University
Language: English
Resource Type: Journal article