Abstract
Properties of phosphoric acid (H3PO4)-doped crystalline silicon (c-Si) with different light-trapping schemes have been investigated for solar cells. Microtextures, b-Si nanotextures, and hybrid textures are fabricated using sodium hydroxide (NaOH) and metal-assisted wet chemical etching (MACE). MACE has been achieved via 30 s of silver nanoparticles (Ag NPs) deposition in a solution of 4.8 M HF:18 mM AgNO3 and 20 s etching in a solution of HF:H2O2:DI H2O (2:1:5). Spin coating of H3PO4 (15% by volume) and Butanol (C4H10O; 75% by volume) on planar c-Si, microtextures, b-Si nanotextures, and hybrid textures is adopted to realize the front junction for the solar cells. Hybrid textures with nanotextures' heights of -450-550 nm and widths of -80-100 nm on microtextures present a weighted average reflection (WAR%) of 8.3% and an estimated junction depth of about-450 nm after the diffusion process. Sheet resistance (R-s) of 148 +/- 1.3 omega/?, carrier concentration (n(e)) of -6.01 x 10(18) cm(-3), and carrier mobility (mu(e)) of 140.7 cm(2)/Vs is obtained for the hybrid textures. Solar cell with hybrid texturing achieves a maximum short-circuit current density (J(sc(max))) of 10.7 mA/cm(2) owing to enhanced light -trapping, which results from optimum absorption. Open-circuit voltage (V-oc), fill factor (FF), and efficiency (EFF) of 640 mV, 0.36, and 2.5% have been obtained for the hybrid textures solar cell compared to 600 mV, 0.34, 1.7% achieved in the b-Si nanotextures solar cell, respectively.