Abstract
In this study, we have investigated theoretically the third-order nonlinear susceptibility associated with intersubband transition in a GaN/GaN/InxGa1-xN/GaN quantum dot-quantum well (QD-QW) structure, emphasizing the influence of the shell thickness, indium concentration and applied electric field F. The wave functions and eigenenergies of confined electrons have been theoretically computed under the effective mass approximation and the compact matrix density. The numerical result show that the intensity and position peak of susceptibility are considerably affected by the geometrical parameters, the applied electric filed and the indium concentration. The result of this work can be used in fabrication of electronic and photonic devices.