Abstract
Broadband amplifier emission near the second telecommunication window in Ho3+ doped 76TeO(2)center dot 10ZnO center dot 9.0PbO center dot 1.0PbF(2)center dot 3.0Na(2)O was studied. The optical transition properties and radiative lifetimes of several excited states of Ho3+ have been predicted using intensity Judd-Ofelt parameters. The emission cross section for Ho3(+) in this glass, around 2 mu m, was calculated according to McCumber theory. The maximum stimulated emission cross section was calculated to be 0.9 x 10(-20) cm(2) for 2046 nm emissions. The theoretical gain cross sections was evaluated and positive gain bands was anticipated. Furthermore, the peak Raman gain coefficient in the present glass was around 250 times larger than that of SiO2. (C) 2013 Elsevier Masson SAS. All rights reserved.