Abstract
Defect passivation and surface modification of hybrid perovskite films are essential to achieving high power conversion efficiency (PCE) and stable perovskite photovoltaics. Here, we demonstrate a facile strategy that combines high PCE with high stability in CH3NH3PbI3 (MAPbI(3)) solar cells. The strategy utilizes inorganic perovskite quantum dots (QDs) to distribute elemental dopants uniformly across the MAPbI(3) film and attach ligands to the film's surface. Compared with pristine MAPbI(3) films, MAPbI(3) films processed with QDs show a reduction in tail states, smaller trap-state density, and an increase in carrier recombination lifetime. This strategy results in reduced voltage losses and an improvement in PCE from 18.3% to 21.5%, which is among the highest efficiencies for MAPbI(3) devices. Ligands introduced with the aid of the QDs render the perovskite film's surface hydrophobic-inhibiting moisture penetration. The devices maintain 80% of their initial PCE under 1-sun continuous illumination for 500 h and show improved thermal stability.