Abstract
We theoretically investigate the effects of quantum size and doping concentration on the current-voltage characteristics of GaN resonant tunneling diodes. The results show a marked dependence of the peak current density on the emitter and collector spacers, and the existence of some thickness in the emitter, for which the electric current density reaches its maximum with a large peak-to-valley ratio. We also study the effect of the doping concentration in the emitter and collector layers. It is found that the doping concentration can greatly affect the current-voltage characteristics. In particular, it increases the peak of the current density and displaces the position of the maxima of the current dependence on the applied bias voltage. The effects of aluminum concentration and temperature are also presented. Finally, it is demonstrated that it is possible to have a symmetrical current for applying bias voltage in both directions by adjusting the thickness of the collector spacer.