Abstract
The electronic band structure and dielectric properties of a GaAs quantum well have been investigated using the pseudopotential approach. The effect of quantum confinement on the electronic and dielectric properties of GaAs has been examined. It is found that significant variations in the studied properties occur at quantum well widths below 5 nm. The information may be useful in obtaining derived electronic and dielectric properties, which was not possible in the unconfined (bulk) GaAs compound semiconductor.