Abstract
We report on the development of InAs/InGaAlAs quantum-dash-in-well structure on InP substrate for wideband emitter applications. A spectral width as broad as 58 meV observed from both photoluminescence and surface photovoltage spectroscopy on the sample indicating the formation of highly inhomogeneous InAs-dash structure that results from the quasi-continuous interband transition. The two-section superluminescent diodes (SLDs), with integrated photon absorber slab as lasing suppression section, fabricated on the InAs dash-in-well structure exhibits the close-to-Gaussian emission with a bandwidth (full-width at half-maximum) of up to 140 nm at similar to 1.6 mu m peak wavelength. The SLD produces a low spectrum ripple of 0.3 dB and an integrated power of similar to 2 mW measured at 20 degrees C under 8 kA/cm(2). The oxide stripe laser exhibits wide lasing wavelength coverage of up to 76 nm at similar to 1.64 mu m center wavelength and an output optical power of similar to 400 mW from simultaneous multiple confined states lasing at room temperature. This rule changing broadband lasing signature, different from the conventional interband diode laser, is achieved from the quasi-continuous interband transition formed by the inhomogeneous quantum-dash nanostructure.