Quantum exponential relaxation of antiferromagnetic domain walls in FeTbO3 single crystal

Journal article

Peer reviewed

X. X Zhang, J Tejada, A Roig, O Nikolov and E Molins

Journal of magnetism and magnetic materials, Vol.137(3), pp.L235-L238

01/11/1994

Abstract

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Exact sciences and technology

Magnetic resonances and relaxations in condensed matter, mössbauer effect

Other topics in magnetic resonances and relaxations

Physics

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Title: Quantum exponential relaxation of antiferromagnetic domain walls in FeTbO3 single crystal
Creators - without role: X. X Zhang - Universitat de Barcelona
J Tejada - Universitat de Barcelona
A Roig - Institut de Ciència de Materials de Barcelona
O Nikolov - University of Liverpool
E Molins - Institut de Ciència de Materials de Barcelona
Publication Details: Journal of magnetism and magnetic materials, Vol.137(3), pp.L235-L238
Publisher: Elsevier Science
Identifiers: 9946064108331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article