Abstract
Quasi-aligned beta-Ga2O3 nanowires were fabricated using the brass wire meshes as the substrates. The nanowire roots were tightly connected to the brass wire surfaces that resulted in a very good physical and electrical contact. Electrical measurements showed that the ohmic contacts were achieved and the resistivities of the nanowires were 300-500 Omega.cm. The Ga2O3 nanowire/brass wire hybrid structures exhibited an enhanced field-emission performance. A turn-on field of similar to 6.2 V.mu m(-1) at an emission current density of 10 mu A.cm(-2) and an emission current fluctuation within +/-13% at a mean field-emission current density of similar to 0.56 mu A.cm(-2) were measured.