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Quasi-neutral Limit of a Nonlinear Drift Diffusion Model for Semiconductors
Journal article   Open access  Peer reviewed

Quasi-neutral Limit of a Nonlinear Drift Diffusion Model for Semiconductors

Ingenuin Gasser, Ling Hsiao, Peter A. Markowich and Shu Wang
Journal of mathematical analysis and applications, Vol.268(1), pp.184-199
01/04/2002

Abstract

entropy method nonlinear drift-diffusion equations Quasi-neutral limit
The limit of the vanishing Debye length (the charge neutral limit) in a nonlinear bipolar drift-diffusion model for semiconductors without a pn-junction (i.e., with a unipolar background charge) is studied. The quasi-neutral limit (zero-Debye-length limit) is determined rigorously by using the so-called entropy functional which yields appropriate uniform estimates.
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https://doi.org/10.1006/jmaa.2001.7813View
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