Abstract
Sheet resistance, R-s, measurements for the (Se65-xAs35Sbx thin films with (0 <= x >= 10) at. %) with thickness film 1000 nm and heating rate, 5 K/min has been explained in this work. Measurements of the sheet resistance used to compute the thermal and electrical parameters in the temperature range from 300 to 665 K. In the sheet resistance curves, two main regions have been considered clearly evidence of one crystallization region for the studied films The activation energy, E-c, of crystallization and Avrami index, n, were estimated. The change of activation energy with volume of crystalline fraction has been deduced. The electrical results of the studied films appear two types of conduction channels which contribute two conduction mechanisms in crystallized region. The activation energies Delta E, two pre-exponential factors sigma(0), sigma(0)* and other parameters has been computed in both of the extended and hopping states regions. The crystalline phases for the as-deposited and annealed films were identified using by x-ray diffraction (XRD).