Abstract
Coplanar radio frequency Schottky diodes based on solution‐processed C60 and ZnO semiconductors are fabricated via adhesion‐lithography. The development of a unique asymmetric nanogap electrode architecture results in devices with a high current rectification ratio (103–106), low operating voltage (<3 V), and cut‐off frequencies of >400 MHz. Device fabrication is scalable and can be performed at low temperatures even on plastic substrates with very high yield.