Abstract
In this paper, we report the simple preparation and investigation of electrical transport properties of nanoform MoS2 thin film transistor (TFT) devices. MoS2 nanoparticles were synthesized by using the hydrothermal method. The physiochemical characterizations such as UV-vis, Fourier transform infrared, X-ray diffraction, and Raman spectroscopy studies were performed. Spin-coating was used to make the thin film on which silver electrodes were made. We observed nonlinear current-voltage (I-V) characteristics; however, the symmetricity was found in the I-V curve which confirms the no formation of the Schottky barrier between thin film and electrodes. Transistor transfer characteristics reveal that the TFT device is n-doped as more drain current modulation is observed when the positive gate voltage is applied. The relationship between gate-current and gate voltage studies concludes that there is no leakage gate current in the TFT device which further confirms the good reliability of transfer characteristics of a device. The device mobility was calculated as ~10.2 cm2/Vs, and the same was explained with plausible reason supported with Raman spectra analysis.