Abstract
In this manuscript, nickel oxide (NiO)/porous silicon (Si) film was prepared using co-precipitation and pulsed laser deposition techniques for ultra-violate (UV) photodetector application. A series of UV photodetectors were fabricated using the corresponding NiO/Si film as a function of the utilized laser energy. Simultaneously, an interdependence correlation between the physical characteristics of the attained film along with the fabricated photodetectors was established. Specifically, higher crystallinity and lower optical bandgap delivered a sound photo-responsive behavior in the proposed device geometry. In details, the attained photo-responsivity was observed to be 2.7 and 3.7 mu A/mWusing laser energy of 300 and 500 mJ, respectively. Concurrently, the optimum device, fabricated at 500 mJ laser energy, exhibited approximate rise and fall periods of 750 and 800 ms, respectively. In addition to the robustness and uniformity of the fabricated UV photodetector, the proposed work presents a substitutional framework for cost-effective and eco-friendly optoelectronic scheme.