Abstract
The development of electrical and optoelectronic devices that are based on transition metal dichalcogenides require the fabrication of high-quality homogeneous junctions. This paper demonstrates how to accomplish this using a lateral or vertical 2D material-based p-type/intrinsic/n-type (p-i-n) homojunction. The capacitance across the junction is reduced, which is a result of the continuous band alignments, and there is less carrier entrapment at the homointerface. Various types of p-i-n diodes are examined in order to demonstrate the current modes of transportation and the optoelectronic effects. This review demonstrates how to make a high-performance homointerface as well as describes the tunneling process in detail, which will be useful in the future development of new electrical and optoelectronic devices. A performance comparison of different parameters is also performed among various doping strategies in order to form homogenous junctions. It is assumed that this summary of the current research on nanomaterials will help 2D materials be used in order to make reliable p-i-n homojunction diodes for low-power and high-speed electronics. Finally, this paper concludes by summarizing the current challenges and the current prospects.