Reciprocal space mapping of GaNxAs1-x grown by RF plasma-assisted solid source molecular beam epitaxy

Journal article

Peer reviewed

W. K Loke, S. F Yoon, T. K NG, S. Z Wang and W. J Fan

Journal of crystal growth, Vol.243(3-4), pp.427-431

01/09/2002

Abstract

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Cross-disciplinary physics: materials science; rheology

Exact sciences and technology

Iii-v semiconductors

Materials science

Methods of deposition of films and coatings; film growth and epitaxy

Molecular, atomic, ion, and chemical beam epitaxy

Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation

Photoluminescence

Physics

Physics of gases, plasmas and electric discharges

Physics of plasmas and electric discharges

Plasma applications

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Title: Reciprocal space mapping of GaNxAs1-x grown by RF plasma-assisted solid source molecular beam epitaxy
Creators - without role: W. K Loke - Nanyang Technological University
S. F Yoon - Nanyang Technological University
T. K NG - Nanyang Technological University
S. Z Wang - Nanyang Technological University
W. J Fan - Nanyang Technological University
Publication Details: Journal of crystal growth, Vol.243(3-4), pp.427-431
Publisher: Elsevier
Identifiers: 9943570008331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article