Abstract
Improving the passivation of contacts in silicon solar cells is crucial for reaching high‐efficiency devices. Herein, the impact of the contact work function on the obtained passivation is examined and quantified using a novel method—quasi‐steady‐state photoluminescence—which provides access to the surface saturation current density after metallization (J
0s,m). The obtained J
0s,m indicates an improvement of the surface passivation when contacts with high work function are applied onto Si wafers passivated with aluminum oxide, regardless of the wafer doping type. This improvement is mainly due to the amplification of the imbalance between the electron and hole concentrations near the Si interface. The passivation quality is reduced when using contacts with low work function in which the recombination rate increases via the charge‐assisted carrier population control. Herein, the vital importance of selecting suitable metals to minimize contact recombination in high‐efficiency solar cells is pointed.
The impact of the contact work function on the obtained passivation is investigated using quasi‐steady‐state photoluminescence measurements. These seem to be the first direct measurements of the surface saturation current density after a practical metallization process. Herein, useful insights into the improvement of the surface passivation using dielectric layers and passivating contacts for high‐efficiency photovoltaic devices are provided.