Recommended Methods to Study Resistive Switching Devices

Mario Lanza; H-S Philip Wong; Eric Pop; Daniele Ielmini; Dimitri Strukov; Brian C. Regan; Luca Larcher; Marco A. Villena; J. Joshua Yang; Ludovic Goux; Attilio Belmonte; Yuchao Yang; Francesco M. Puglisi; Jinfeng Kang; Blanka Magyari-Kope; Eilam Yalon; Anthony Kenyon; Mark Buckwell; Adnan Mehonic; Alexander Shluger; Haitong Li; Tuo-Hung Hou; Boris Hudec; Deji Akinwande; Ruijing Ge; Stefano Ambrogio; Juan B. Roldan; Enrique Miranda; Jordi Sune; Kin Leong Pey; Xing Wu; Nagarajan Raghavan; Ernest Wu; Wei D. Lu; Gabriele Navarro; Weidong Zhang; Huaqiang Wu; Runwei Li; Alexander Holleitner; Ursula Wurstbauer; Max C. Lemme; Ming Liu; Shibing Long; Qi Liu; Hangbing Lv; Andrea Padovani; Paolo Pavan; Ilia Valov; Xu Jing; Tingting Han; Kaichen Zhu; Shaochuan Chen; Fei Hui; Yuanyuan Shi

doi:10.1002/aelm.201800143

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Recommended Methods to Study Resistive Switching Devices

Journal article

Open access

Peer reviewed

Recommended Methods to Study Resistive Switching Devices

Mario Lanza, H-S Philip Wong, Eric Pop, Daniele Ielmini, Dimitri Strukov, Brian C. Regan, Luca Larcher, Marco A. Villena, J. Joshua Yang, Ludovic Goux, …

Advanced electronic materials, Vol.5(1), pp.1800143-n/a

01/2019

DOI: https://doi.org/10.1002/aelm.201800143

Abstract

Materials Science

Materials Science, Multidisciplinary

Nanoscience & Nanotechnology

Physical Sciences

Physics

Physics, Applied

Science & Technology

Science & Technology - Other Topics

Technology

Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, with electronic nonvolatile memories being those that have received the most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology.

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Title: Recommended Methods to Study Resistive Switching Devices
Creators - without role: Mario Lanza - Soochow University
H-S Philip Wong - Stanford University
Eric Pop - Stanford University
Daniele Ielmini - Politecnico di Milano
Dimitri Strukov - University of California, Santa Barbara
Brian C. Regan - University of California, Los Angeles
Luca Larcher - University of Modena and Reggio Emilia
Marco A. Villena - Stanford University
J. Joshua Yang - Univ Massachusetts, Dept Elect & Comp Engn, Amherst, MA 01003 USA
Ludovic Goux - IMEC
Attilio Belmonte - IMEC
Yuchao Yang - Peking University
Francesco M. Puglisi - University of Modena and Reggio Emilia
Jinfeng Kang - Peking University
Blanka Magyari-Kope - Stanford University
Eilam Yalon - Stanford University
Anthony Kenyon - Torrington Hospital
Mark Buckwell - Torrington Hospital
Adnan Mehonic - Torrington Hospital
Alexander Shluger - University College London
Haitong Li - Stanford University
Tuo-Hung Hou - National Yang Ming Chiao Tung University
Boris Hudec - National Yang Ming Chiao Tung University
Deji Akinwande - The University of Texas at Austin
Ruijing Ge - The University of Texas at Austin
Stefano Ambrogio - IBM Research - Almaden
Juan B. Roldan - Universidad de Granada
Enrique Miranda - Universitat Autònoma de Barcelona
Jordi Sune - Universitat Autònoma de Barcelona
Kin Leong Pey - Singapore University of Technology and Design
Xing Wu - East China Normal University
Nagarajan Raghavan - Singapore University of Technology and Design
Ernest Wu - IBM
Wei D. Lu - University of Michigan–Ann Arbor
Gabriele Navarro - CEA LETI
Weidong Zhang - Liverpool John Moores University
Huaqiang Wu - Tsinghua University
Runwei Li - Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China
Alexander Holleitner - Schott
Ursula Wurstbauer - Schott
Max C. Lemme - RWTH Aachen University
Ming Liu - Institute of Microelectronics
Shibing Long - Institute of Microelectronics
Qi Liu - Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China
Hangbing Lv - Institute of Microelectronics
Andrea Padovani - SRL
Paolo Pavan - University of Modena and Reggio Emilia
Ilia Valov - RWTH Aachen University
Xu Jing - Soochow University
Tingting Han - Soochow University
Kaichen Zhu - Soochow University
Shaochuan Chen - Soochow University
Fei Hui - Soochow University
Yuanyuan Shi - Soochow University
Publication Details: Advanced electronic materials, Vol.5(1), pp.1800143-n/a
Publisher: Wiley
Number of pages: 28
Grant note: EP/S000259/1 / EPSRC; UK Research & Innovation (UKRI); Engineering & Physical Sciences Research Council (EPSRC) Young 1000 Global Talent Recruitment Program of the Ministry of Education of China BK20150343 / Jiangsu Government 61502326; 41550110223; 11661131002 / National Natural Science Foundation of China; National Natural Science Foundation of China (NSFC) Non-volatile Memory Technology Research Initiative (NMTRI) SX21400213 / Ministry of Finance of China
Identifiers: 9944847208331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article