Abstract
The blend organic semiconductor-p-type silicon diodes with various molar ratios of 6,13-bis(triisopropylsilylethynyle) (TIPS) pentacene:rhodamine were fabricated using spin coating method. The rectifying properties of the diodes were studied depending on the molar ratios of TIPS:RHD blends. The prepared diodes for the various blend concentrations indicate a rectification behavior with ideality factor between 2.3 and 7.3 values and barrier height between 0.42 eV and 0.79 eV values. The interface properties of the diodes were investigated by C-G-V characteristics at various frequencies. The best diode as an optimum one was obtained as TIPS:RHD molar ratio of 1:3 for its good electrical rectification. (C) 2014 Elsevier B.V. All rights reserved.