Reduction Mechanism of Dislocation Density in GaAs Films on Si Substrates

Journal article

Peer reviewed

Hirofumi Shimomura, Yoshitaka Okada, Hisashi Matsumoto, Mitsuo Kawabe, Yoshizo Kitami and Yoshio Bando

Japanese Journal of Applied Physics, Vol.32(Part 1, No. 1B), pp.632-636

30/01/1993

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Title: Reduction Mechanism of Dislocation Density in GaAs Films on Si Substrates
Creators - without role: Hirofumi Shimomura
Yoshitaka Okada
Hisashi Matsumoto
Mitsuo Kawabe
Yoshizo Kitami
Yoshio Bando
Publication Details: Japanese Journal of Applied Physics, Vol.32(Part 1, No. 1B), pp.632-636
Identifiers: 9952753708331
Academic Unit: King Saud University
Language: English
Resource Type: Journal article