Reflection high-energy electron diffraction intensity oscillations during GexSi1-x MBE growth on Si(001) substrates

$Reflection high-energy electron diffraction intensity oscillations during GexSi1-x MBE growth on Si(001) substrates$

Journal article

Peer reviewed

K Sakamoto, T Sakamoto, S Nagao, G Hashiguchi, K Kuniyoshi and Y Bando

Japanese journal of applied physics, Vol.26(5), pp.666-670

01/05/1987

Abstract

Condensed matter: structure, mechanical and thermal properties

Exact sciences and technology

Physics

Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)

Thin film structure and morphology

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Title: Reflection high-energy electron diffraction intensity oscillations during GexSi1-x MBE growth on Si(001) substrates
Creators - without role: K Sakamoto - Electrotechnical Institute
T Sakamoto - Electrotechnical Institute
S Nagao - Electrotechnical Institute
G Hashiguchi - Electrotechnical lab., Tsukuba, Ibaraki 305, Japan
K Kuniyoshi - Electrotechnical Institute
Y Bando - Electrotechnical lab., Tsukuba, Ibaraki 305, Japan
Publication Details: Japanese journal of applied physics, Vol.26(5), pp.666-670
Publisher: Japanese journal of applied physics
Identifiers: 9953183108331
Academic Unit: King Saud University
Language: English
Resource Type: Journal article