Relative importance of deposition rate for surface potential in amorphous silicon/SiO2 interface

Journal article

Peer reviewed

A Mosbah, M. S Aida and S Abdesselem

Journal of physics. D, Applied physics, Vol.35(16), pp.2015-2020

21/08/2002

Abstract

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures

Electronic transport in interface structures

Exact sciences and technology

Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Physics

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Title: Relative importance of deposition rate for surface potential in amorphous silicon/SiO2 interface
Creators - without role: A Mosbah - Université Constantine 2
M. S Aida - Université Constantine 2
S Abdesselem - Institut de Physique
Publication Details: Journal of physics. D, Applied physics, Vol.35(16), pp.2015-2020
Publisher: Institute of Physics
Identifiers: 9940068208331
Academic Unit: King Abdulaziz University
Language: English
Resource Type: Journal article