Abstract
We report the bipolar resistive switching behavior observed in ITO/graphene oxide/Al planar metal-insulator-metal capacitor structures. The resistive switching memory devices have been fabricated on ITO coated glass substrates by drop casting method of graphene oxide suspension in water. When used as resistive switching cell with low switching voltage, a HRS/LRS resistance ratio of similar to 11 times was found. The current conduction mechanism is found to be via multiple charge transport processes. The associated resistive switching mechanism is attributed to the electro-diffusion of oxygen and the formation of sp(2) graphene clusters in a sp(3) insulating graphene oxide. Reliable and reproducible resistive switching behavior of graphene oxide thin films shows the potential of graphene-based non-volatile devices for future memory applications.