Resonant Raman scattering by interface phonons in type II GaAs/AlAs superlattices

Journal article

Peer reviewed

A Sayari, A Mlayah, M Maaref, F. F Charfi, R Carles and R Planel

Solid state communications, Vol.104(6), pp.361-365

01/11/1997

Abstract

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Exact sciences and technology

Iii-v and ii-vi semiconductors

Iii-v semiconductors

Infrared and raman spectra and scattering

Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation

Optical properties of specific thin films

Physics

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Title: Resonant Raman scattering by interface phonons in type II GaAs/AlAs superlattices
Creators - without role: A Sayari - Tunis University
A Mlayah - Université Toulouse III - Paul Sabatier
M Maaref - Tunis University
F. F Charfi - Tunis University
R Carles - Université Toulouse III - Paul Sabatier
R Planel - Laboratoire de Microstructures et de Microélectronique, Centre National de Recherche Scientifique, Centre National d'Etudes des Télécommunications, Boîte Postal 107, 92225 Bagneux, France
Publication Details: Solid state communications, Vol.104(6), pp.361-365
Publisher: Elsevier
Identifiers: 9932911908331
Academic Unit: University of Jeddah
Language: English
Resource Type: Journal article