Abstract
A novel theoretical mathematical-physical model for elastic semiconductor material is investigated when the microstretch properties of the medium are considered. During the photo-generated processes, the generalized thermoelasticity theory in photo-thermal theory is studied for excited semiconductor medium. The governing equations describe the coupled propagation of the elastic-thermal-plasma (optical) waves when the thermomicrostretch elastic semiconductor material is considered during a rotation field. The photo-thermal transport processes occur during a two-dimension (2D) of elastic and electronic deformation when the microinertia of microelement is considered. The harmonic wave method can obtain the main solutions for the basic physical variables. The complete analytical solutions of the considered variables are obtained when some mechanical-thermal and plasma conditions are applied on the boundary of the semiconductor medium. The numerical simulations of silicon (Si) and Germanium (Ge) media are constructed graphically with many comparisons according to new parameters with thermal memories and rotation parameters.