Abstract
A novel mathematical-physical model is introduced in the context of the two-temperature thermoelasticity theory which describes the interaction between electrons and holes in semiconductors material. The response of the elasto-thermo- mechanical continuous waves is investigated during thermo-mass-diffusion transport processes. The photothermal (PT) technique is applied for the exciting medium. The one-dimensional (1D) Cartesian coordinate is used to describe the governing equations. Dimensionless quantity is used in the Laplace transform domain. To obtain the unknown variables, some conditions are applied at the free surface of the medium to get the main quantities analytically. The conversion of the Laplace transform technique has been employed with some numerical approximations to obtain the exact expressions of the main physical fields. The computational results have been introduced of silicon material to illustrate the impacts of the two temperature parameter and thermal memories on the wave propagation of the physical fields according to photo-thermoelasticity theory.