Abstract
The conductance and the time-averaged current of a quantum dot turnstile device are deduced using the Landauer-Buttiker formula. The present turnstile device is realized by modulating the tunnel barriers with rf-signal. A conductance oscillation is obtained with the peak conductance shows the monotonic increase as a function of the gate voltage. In each rf-cycle, n-electrons are transferred from the left reservoir to the right one, resulting in the quantization of the current. The proposed turnstile device might be useful in future quantum information applications and other applications in the field of nanoelectronics.