Abstract
The authors present a theoretical model and analysis to gain a further insight of the broadband InGaAs/GaAs quantum-dot laser characteristics. A detailed analysis of the role of both inhomogeneous and homogeneous optical gain broadenings on the broad lasing emission is incorporated in the theoretical model and compared with the experimental results. The experimental data of broadband laser signature agrees well with theoretical calculation confirming that the broadband stimulated emission from the laser at room temperature is a result of the occurrence of bistate lasing in highly inhomogeneous dots. (c) 2007 American Institute of Physics.