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Room-Temperature Hysteresis in a Hole-Based Quantum Dot Memory Structure
Journal article   Open access  Peer reviewed

Room-Temperature Hysteresis in a Hole-Based Quantum Dot Memory Structure

Tobias Nowozin, Michael Narodovitch, Leo Bonato, Dieter Bimberg, Mohammed N. Ajour, Khaled Daqrouq and Abdullah Balamash
Journal of nanotechnology, Vol.2013, pp.1-4
01/01/2013
DOI: https://doi.org/10.1155/2013/797964

Abstract

Nanoscience & Nanotechnology Science & Technology Science & Technology - Other Topics
We demonstrate a memory effect in self-assembled InAs/Al0.9Ga0.1 As quantum dots (QDs) near room temperature. The QD layer is embedded into a modulation-doped field-effect transistor (MODFET) which allows to charge and discharge the QDs and read out the logic state of the QDs. The hole storage times in the QDs decrease from seconds at 200K down to milliseconds at room temperature.
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https://doi.org/10.1155/2013/797964View
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