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Room temperature lambda similar to 3.3 mu m InP-based InGaAs/AlAs(Sb) quantum cascade lasers
Journal article   Peer reviewed

Room temperature lambda similar to 3.3 mu m InP-based InGaAs/AlAs(Sb) quantum cascade lasers

S. Y. Zhang, D. G. Revin, J. P. Commin, K. Kennedy, A. B. Krysa and J. W. Cockburn
Electronics letters, Vol.46(6), pp.439-U84
18/03/2010
DOI: https://doi.org/10.1049/el.2010.0202

Abstract

Engineering Engineering, Electrical & Electronic Science & Technology Technology
Room temperature strain-compensated In(0.7)Ga(0.3)As/AlAs(Sb)/InP quantum cascade lasers operating at lambda similar to 3.3 mu m are reported. 20 mm wide- and 1.5 mm-long devices with as-cleaved facets deliver more than 1 W peak optical power per facet at 300 K. A detailed comparison of the device characteristics for the lasers fabricated from various parts of the 2-inch wafer has been performed.

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