Abstract
A novel method to fabricate stable Schottky diodes on n-type InP was reported. The method is based on the chemical adsorption of metals and their successive oxidation for growing very thin metal oxide layers on top of n-type InP substrates. Schottky diodes were formed by using Au electrodes and the current-voltage characteristics were evaluated. It was found that nearly ideal Schottky diodes with barrier heights as high as 0.73 V, ideality factor of 1.16, and the reverse current of 5.5 X 10(-7) A/cm2 at -1 V could be reproducibly obtained. CdOx interfacial layers were analyzed by Auger electron spectroscopy.