Abstract
Shockley-Read-Hall (SRH) recombination is the main determinant for an effective minority carrier lifetime in silicon. This research has focused on finding the recombination strength of interstitial iron of a low injection Shockley-Read-Hall recombination in compensated solar grade silicon by means of analytical modeling. This study has found that the strength of iron in an SRH recombination depends on the doping concentration and symmetry of a minority carrier capture cross-section. This study shows that iron becomes more recombination active at higher doping and lower symmetry of a capture cross-section.