Abstract
AlGaN/GaN HEMTs have been fabricated and their static and small-signal RF characteristics investigated. Device simulation was also carried on in ADS-Agilent to probe into the operation mechanism of HEMTs. As we used this last simulation, tool to extract the Radio-Frequency (RF) parameter; Cut-off Frequency (F-t), maximum oscillation frequency (F-mag), variation maximum stable gain (G(ms)) and maximum available gain (G(ma)). Mechanical stress is an important factor influencing the performance and reliability of GaN-based devices. In highly piezoelectric materials like AlGaN/GaN, mechanical stress directly influences the piezoelectric polarization, and hence the charge density of the 2D electron gas.