Abstract
In this work, (90 - x) TeO2 - (x)V2O5 - 10Li(2)O glass for (x = 20, 30, 40, 50, 60 and 70 in mol %) were prepared by rapid quenching technique. The properties of semiconducting glasses and information about the behavior of the photo excitation were tested by measuring the steady-state and transient photoconductivity. Also, the mechanisms of a conductivity type, electronic, ionic, or mixed electronic-ionic conduction were discussed. The photoconductivity measurements show that the photocurrent not only increased with rising light intensity but also by increasing vanadium pentoxide and a decrease of tellurium dioxide. The transient photoconductivity behavior in glass materials was performed via three sets of measurements for the rise and decay of photocurrent at different intensities, temperatures and applied voltages. The exponent parameter y that determines the recombination mechanism in the semiconductor materials lies between 0.47 and 0.59 which can be considered a continuous distribution of traps exists in the band gap region with predominant bimolecular carrier recombination in the glass samples. The activation energy values of the present samples were lying between 0.314 and 0.249 eV in dark, while in the photo, they changed to 0.275 and 0.213 eV.