Abstract
Zinc oxide and Ga-doped ZnO nanowires and nanorods are synthesized on various substrate like Fluorine doped tin oxide glass plate, SiO2 coated Silicon substrate and aluminum nitride coated silicon substrates. The coating process carried out using zinc oxide sol-gel solution. The synthesized material was characterized using XRD (X-ray diffraction), FE-SEM (Field emission scanning electron microscopy), photoluminescence spectroscopy and electrical conductive gas sensor measurements. The fine nanowires formation on FTO plants are clearly seen in FE-SEM results. The ZnO nanorods and Ga-doped ZnO forms nanodisk structures on AlN coated Si substrate. The synthesized doped and undoped ZnO coated various substrate tested for its electrical conductivity measurements under flow of hydrogen gas sensor applications. The electrical property of the as synthesized material was analyzed by I-V characterization.