Abstract
Synthesis of buried insulating layers by ion implantation of oxygen and nitrogen into silicon is reviewed. Relevant concepts of ion implantation are discussed. The effects of various implantation and annealing parameters on the structure and characteristics of insulating layers are analysed in the light of recent experimental results. The review is oriented such that the reader does not have to be familiar with any particular characterisation technique to appreciate the physical ideas involved in the synthesis of buried insulating layers in silicon. 148 refs.