Self-assembled GaInNAs/GaAs quantum dots grown by solid-source molecular beam epitaxy

Journal article

Peer reviewed

Z. Z Sun, S. F Yoon, K. C Yew, W. K Loke, S. Z Wang and T. K NG

Journal of crystal growth, Vol.242(1-2), pp.109-115

01/07/2002

Abstract

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Condensed matter: structure, mechanical and thermal properties

Cross-disciplinary physics: materials science; rheology

Exact sciences and technology

Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties

Materials science

Methods of deposition of films and coatings; film growth and epitaxy

Molecular, atomic, ion, and chemical beam epitaxy

Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation

Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

Physics

Quantum wells

Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)

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Title: Self-assembled GaInNAs/GaAs quantum dots grown by solid-source molecular beam epitaxy
Creators - without role: Z. Z Sun - Nanyang Technological University
S. F Yoon - Nanyang Technological University
K. C Yew - Nanyang Technological University
W. K Loke - Nanyang Technological University
S. Z Wang - Nanyang Technological University
T. K NG - Nanyang Technological University
Publication Details: Journal of crystal growth, Vol.242(1-2), pp.109-115
Publisher: Elsevier
Identifiers: 9944466608331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article