Abstract
Band structures of n-i doped lattice-matched GaNAsBi/GaAs quantum wells are studied theoretically using a self-consistent calculation (based on the envelop function formalism) combined with the 16-band anti-crossing model. Operating at 1.55 mu m, these QWs can represent active zones of temperature-insensitive optoelectronic device applications intended for optical fiber communications. We have calculated physical parameters of the structures such as the confining potential profiles, the Fermi level, the subband energies and their corresponding wavefunctions as well as the oscillator strength of inter-band transitions, the subband occupations, and the confined electrons density distributions. Finally, the absorption coefficient spectra of GaNAsBi-based QWs are also computed. (C) 2014 Elsevier Ltd. All rights reserved.